Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3
XPS study from a clean surface of Al2O3 single crystals
Oxygen stoichiometry and instability in aluminum oxide tunnel barrier layers
XPS study from a clean surface of Al2O3 single crystals
Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories | Scientific Reports
Binding energy of Ag/Al2O3 elements | Download Table
Al 2p XPS spectra for the a control and b Al⁺ implanted... | Download Scientific Diagram
XPS, FTIR, EDX, and XRD Analysis of Al2O3 Scales Grown on PM2000 Alloy
XPS study from a clean surface of Al2O3 single crystals
XPS spectra of O1s for Al 2 O 3 films prepared with (a) Untreated, (b)... | Download Scientific Diagram
Al2O3 Surface Complexation for Photocatalytic Organic Transformations | Journal of the American Chemical Society
Effects of high-temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structures
![PDF] Interaction of Water with Ordered θ-Al2O3 Ultrathin Films Grown on NiAl(100) | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/cdf22cc879279cca16ae98b993c4c2c9399b563e/3-Figure3-1.png "PDF] Interaction of Water with Ordered θ-Al2O3 Ultrathin Films Grown on NiAl(100) | Semantic Scholar")
PDF] Interaction of Water with Ordered θ-Al2O3 Ultrathin Films Grown on NiAl(100) | Semantic Scholar
PdIn/Al2O3 Intermetallic Catalyst: Structure and Catalytic Characteristics in Selective Hydrogenation of Acetylene | SpringerLink
XPS spectra of high-resolution of O 1s for (a) Al2O3 reference (b)... | Download Scientific Diagram
Electronics | Free Full-Text | Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing
Al 2p (top), O 1 s (middle) and Si 2p (bottom) XPS spectra for Al2O3... | Download Scientific Diagram
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
Figure 1 from Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition. | Semantic Scholar
XPS study from a clean surface of Al2O3 single crystals
Figure 1 from Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si | Semantic Scholar
Electronics | Free Full-Text | Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing
Alumina | Al2O3 | ChemSpider
High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3
O 1s and Al 2p XPS spectra of Al2O3 films: a) O1s: AP‐CVD, b) O1s:... | Download Scientific Diagram
